ArticleNano letters2024
Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization.
Article in Nano letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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9 citing papers in PubMed, 37 citations in OpenAlex.
- Defect-Induced Single-Photon Emission in ZnPSACS nano · 2026Article
- Narrowband quantum emitters in hexagonal boron nitride with optically addressable spins.Nature materials · 2026Article
- Identifying the Origin of Hexagonal Boron Nitride Single Photon Emitters with nano-FTIR.The journal of physical chemistry letters · 2026Article
- Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001).Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Systematic investigation of the generation of luminescent emitters in hBN via irradiation engineering.Scientific reports · 2025Article
- Room-temperature high-purity single-photon emission from carbon-doped boron nitride thin films.Science advances · 2025Article
- A single spin in hexagonal boron nitride for vectorial quantum magnetometry.Nature communications · 2025Article
- A tale of two transfers: characterizing polydimethylsiloxane viscoelastic stamping and heated poly bis-A carbonate transfer of hexagonal boron nitride.Micron (Oxford, England : 1993) · 2025Article
- Nb impurity-bound excitons as quantum emitters in monolayer WSNature communications · 2024Article
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Authors and funding
7 authors at 1 institution in 1 country.
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Abstract
Most hexagonal boron nitride (hBN) single-photon emitters (SPEs) studied to date suffer from variable emission energy and unpredictable polarization, two crucial obstacles to their application in quantum technologies. Here, we report an SPE in hBN with an energy of 2.2444 ± 0.0013 eV created via carbon implantation that exhibits a small inhomogeneity of the emission energy. Polarization-resolved measurements reveal aligned absorption and emission dipole orientations with a 3-fold distribution, which follows the crystal symmetry. Photoluminescence excitation (PLE) spectroscopy results show the predictability of polarization is associated with a reproducible PLE band, in contrast with the non-reproducible bands found in previous hBN SPE species. Photon correlation measurements are consistent with a three-level model with weak coupling to a shelving state. Our ab initio excited-state calculations shed light on the atomic origin of this SPE defect, which consists of a pair of substitutional carbon atoms located at boron and nitrogen sites separated by a hexagonal unit cell.
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