ArticleRecent patents on nanotechnology2025
Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process.
Article in Recent patents on nanotechnology, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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3 authors at 3 institutions in 3 countries.
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Abstract
introductionThis work proposes a Double-Gate (DG) MOSFET with a Single Material made of Silicon On-Insulator (SOI). The Lanthanum Oxide material with a high k-dielectric constant has been used as an interface between two gates and the channel. The Monte Carlo analysis has been used to determine the Conduction Band Energy (Ec) profiles and electron sheet carrier densities (ns) for a Silicon channel thickness (tsi) of 10 nm at 0.5 V gate drain-source voltages. The transverse electric fields are weak at the midchannel of DG SOI MOSFETs, where quantum effects are encountered. The Monte Carlo simulation has been confirmed to be effective for high-energy transport. A particle description reproduces the granularity property of the transport for nanoscale modeling.
methodsThis work utilizes a Monte Carlo (MC) Simulation for the proposed Double Gate Single Material Silicon On Insulator MOSFET with (La
resultsThe peak electric field (E) simulation results and an average drift velocity (υ
conclusionThis proposed patent design, such as double-gate SOI-based devices, is the best suggestion for significant scalability challenges. Emerging technologies reach the typical DG SOI MOSFET's threshold performance when their geometrical dimensions are in the nanometer region. This device based on nanomaterial compounds has been more submissive than conventional devices. The nanomaterials usage in the design is more suitable for downscaling and reducing packaging density.
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