ArticleScientific reports2024
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices.
Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Impact of Fabrication Defects on FPGA Logic Using Memristor-Based Memory Cells.Micromachines · 2026Article
- All HfOACS applied materials & interfaces · 2025Article
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Authors and funding
12 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this work, the quasi-analog to discrete transition occurring in the current-voltage characteristic of oxygen engineered yttrium oxide-based resistive random-access memory (RRAM) devices is investigated in detail. In particular, the focus of our research is not on the absolute conductance values of this characteristic but on the magnitude of its conductance changes occurring during the reset process of the device. It is found that the detected changes correspond to conductance values predominantly of the order of the quantum unit of conductance G
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Registered trials
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