ReviewNano-micro letters2024
Chalcogenide Ovonic Threshold Switching Selector.
Review in Nano-micro letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 16 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
16 citing papers in PubMed.
- Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Opposite Trap-State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Stateful Logic Using Selector-Only-Memory With Tunable Operation Directionality.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Electroforming-Free, Self-Rectifying Selector-Only Memory With Diffusive Cu-Ion Dynamics for Logic-In-Memory Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Elemental Selector for High-Density Memory Integration.Nano-micro letters · 2026Article
- Non-Arrhenius threshold switching by field-driven dipolar ordering.Nature communications · 2026Article
- A generic compact model for resistive memories and switches.Scientific reports · 2026Article
- On-device cryogenic quenching enables robust amorphous tellurium for threshold switching.Nature communications · 2026Article
- Multisensory Neuromorphic Devices: From Physics to Integration.Nano-micro letters · 2026Review
- Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges.Nano-micro letters · 2026Review
- Glass Formation in the GeSeMaterials (Basel, Switzerland) · 2025Review
- Binary B-Te Selectors Reinvented: Confined Conductive Paths Unlock Superior Ovonic Threshold Switching.ACS applied materials & interfaces · 2025Article
- The Synthesis of New Chalcogenides from the System GeTeMaterials (Basel, Switzerland) · 2025Article
- Microscopic Origin of Polarity-Dependent VAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- GeSe ovonic threshold switch: the impact of functional layer thickness and device size.Scientific reports · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Today's explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing a brief introduction to the discovery process of the OTS phenomenon. Subsequently, we summarize the key electrical parameters of OTS devices and delve into recent explorations of OTS materials, which are categorized as Se-based, Te-based, and S-based material systems. Furthermore, we discuss various models for the OTS switching mechanism, including field-induced nucleation model, as well as several carrier injection models. Additionally, we review the progress and innovations in OTS mechanism research. Finally, we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications, such as self-selecting memory and neuromorphic computing.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.