Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration.

Byeong-Jun Park, Han-Sol Kim, Sung-Ho Hahm

Open access · goldAbstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

0.4field-weighted citation impact, top 41% of its field

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 2 citations in OpenAlex.

Nanoelectronics: Materials, Devices and Applications.Nanomaterials (Basel, Switzerland) · 2024
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors at 1 institution in 1 country.

Byeong-Jun ParkSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Han-Sol KimSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Sung-Ho HahmSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Kyungpook National University · KR

Funding

National Research Foundation of Korea (NRF) grant funded by the Korea government 2020R1I1A3A04037962The BK21 Four Project funded by the Ministry of Education, Korea 4199990113966

6 · The paper itself

Abstract

Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, has broad development prospects in the optoelectronics field. We analyze the effects of trap states on the output characteristics of an inversion mode n-channel GaN SB-MOSFET using TCAD simulations. At the oxide/GaN interface below the gate, it was demonstrated that shallow donor-like traps were responsible for degrading the subthreshold swing (SS) and off-state current density (I

Indexed as

gallium nitrideinterface defectSchottky barrier-MOSFETUV optoelectronics

Identifiers

PMID38202514

DOI10.3390/nano14010059

PMCPMC10781018

OpenAlexW4390235285

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.