ArticlePloS one2024
Impact of Sn-doping on the optoelectronic properties of zinc oxide crystal: DFT approach.
Article in PloS one, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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8 authors.
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Abstract
This study aims to provide a concise overview of the behavior exhibited by Sn-doped ZnO crystals using a computational technique known as density functional theory (DFT). The influence of Sn doping on the electronic, structural, and optical properties of ZnO have been explored. Specifically, the wavelength dependent refractive index, extinction coefficient, reflectance, and absorption coefficient, along with electronic band gap structure of the Sn doped ZnO has been examined and analyzed. In addition, X-ray diffraction (XRD) patterns have been obtained to investigate the structural characteristics of Sn-doped ZnO crystals with varying concentrations of Sn dopant atoms. The incorporation of tin (Sn) into zinc oxide (ZnO) has been observed to significantly impact the opto-electronic properties of the material. This effect can be attributed to the improved electronic band structure and optical characteristics resulting from the tin doping. Furthermore, the controllable structural and optical characteristics of tin-doped zinc oxide will facilitate the development of various light-sensitive devices. Moreover, the impact of Sn doping on the optoelectronic properties of ZnO is thoroughly investigated and documented.
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