ReviewMaterials (Basel, Switzerland)2023
Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review.
Review in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
4 citing papers in PubMed.
- CCD Pixel Miniaturization Technologies for Spatial Resolution Enhancement.Sensors (Basel, Switzerland) · 2026Review
- Advanced Laser Technologies for Efficient Crystalline Silicon Solar Cells.Nano-micro letters · 2026Review
- Solid-State Laser Annealing (SLA) of Fully Solution-Processed Amorphous InZnO Thin-Film Transistors at Various Fluence.ACS omega · 2025Article
- High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing.Materials (Basel, Switzerland) · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
6 authors.
Funding
Abstract
Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Silicon finds extensive use in diverse applications, including microelectronics and solar cells, while SiC serves as a crucial material for developing components designed to operate in challenging environments or high-power integrated devices. The review commences with an exploration of the underlying theory and fundamentals of laser annealing techniques. It then delves into an analysis of the most pertinent studies focused on the crystallization of these two semiconductor materials.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.