Evidence map›Paper›PMID 38133500›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

A Complicated Route from Disorder to Order in Antimony-Tellurium Binary Phase Change Materials.

Yonghui Zheng, Wenxiong Song, Zhitang Song, Yuanyuan Zhang, Tianjiao Xin, Cheng Liu, Yuan Xue, Sannian Song, Bo Liu, Xiaoling Lin and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Yonghui ZhengKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
Wenxiong SongNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200250, China.
Zhitang SongNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200250, China.
Yuanyuan ZhangKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
Tianjiao XinKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
Cheng LiuKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
Yuan XueNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200250, China.
Sannian SongNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200250, China.
Bo LiuSuzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China.
Xiaoling LinThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, Guangdong, 511370, China.
Vladimir G KuznetsovA.F. Ioffe Physico-Technical Institute RAS, St Petersburg, 194021, Russia.
Ilya I TupitsynDepartment of Physics, St. Petersburg State University, St. Petersburg, 199034, Russia.
Alexander V KolobovInstitute of Physics, Herzen State Pedagogical University of Russia, St Petersburg, 191186, Russia.
Yan ChengKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.ORCID https://orcid.org/0000-0002-0067-2646

Funding

National Natural Science Foundation of China 12134003National Natural Science Foundation of China 62104071National Natural Science Foundation of China 62174054National Natural Science Foundation of China 92064003Natural Science Foundation of Chongqing cstc2021jcyj-msxmX0750Natural Science Foundation of Shanghai Municipality 23ZR1418000Natural Science Research of Jiangsu Higher Education Institutions of China 19KJA210005Open Research Fund of China National Key Laboratory of Materials for Integrated Circuits NKLJC-K2023-05Russian Science Foundation 22-19-00766Shanghai Sailing Program 21YF1410900Shanghai Science and Technology Innovation Action Plan Intergovernmental International Science and Technology Cooperation Program 23520712000Strategic Priority Research Program of the Chinese Academy of Sciences XDB44000000
6 · The paper itself

Abstract

The disorder-to-order (crystallization) process in phase-change materials determines the speed and storage polymorphism of phase-change memory devices. Only by clarifying the fine-structure variation can the devices be insightfully designed, and encode and store information. As essential phase-change parent materials, the crystallized Sb-Te binary system is generally considered to have the cationic/anionic site occupied by Sb/Te atoms. Here, direct atomic identification and simulation demonstrate that the ultrafast crystallization speed of Sb-Te materials is due to the random nature of lattice site occupation by different classes of atoms with the resulting octahedral motifs having high similarity to the amorphous state. It is further proved that after atomic ordering with disordered chemical occupation, chemical ordering takes place, which results in different storage states with different resistance values. These new insights into the complicated route from disorder to order will play an essential role in designing neuromorphic devices with varying polymorphisms.

Indexed as

antimony-tellurium binary materialsatomic structurephase-change materialsphase transition mechanismspherical aberration-corrected transmission electron microscope

Identifiers

PMID38133500
PMCPMC10916584

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.