ArticleRSC advances2023
Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing.
Article in RSC advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. It carries an expression of concern. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed.
- Self-Powered Neuromorphic Systems Based on Tribotronics Synaptic Devices.Small (Weinheim an der Bergstrasse, Germany) · 2026Review
- Selected Deposition Techniques and the Effect of Doping on the Properties of Thin ZnO Films: A Literature Review.Materials (Basel, Switzerland) · 2026Review
- Defect-induced optical and thermoelectric properties of cobalt doped ZnO nanostructures prepared through hydrothermal route.Scientific reports · 2025Article
- Design of ZnO-VSeScientific reports · 2025Article
- Influence of defects on the enhancement of thermoelectric properties in Sn-doped ZnO nanostructure synthesized via hydrothermal route.Frontiers in chemistry · 2025Article
- Smart materials for flexible electronics and devices: hydrogel.RSC advances · 2024Review
- Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology.RSC advances · 2024Article
- Unraveling the Complex Interactions: Machine Learning Approaches to Predict Bacterial Survival against ZnO and Lanthanum-Doped ZnO Nanoparticles.Antibiotics (Basel, Switzerland) · 2024Article
Corrections and comments
- Erratum issued
- Expression of concern
Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
We investigate the morphological, electrical, magnetic, and resistive switching properties of (Co, Yb) co-ZnO for neuromorphic computing. By using hydrothermal synthesized nanoparticles and their corresponding sputtering target, we introduce Co and Yb into the ZnO structure, leading to increased oxygen vacancies and grain volume, indicating grain growth. This growth reduces grain boundaries, enhancing electrical conductivity and room-temperature ferromagnetism in Co and Yb-doped ZnO nanoparticles. We present a sputter-grown memristor with a (Co, Yb) co-ZnO layer between Au electrodes. Characterization confirms the ZnO layer's presence and 100 nm-thick Au electrodes. The memristor exhibits repeatable analog resistance switching, allowing manipulation of conductance between low and high resistance states. Statistical endurance tests show stable resistive switching with minimal dispersion over 100 pulse cycles at room temperature. Retention properties of the current states are maintained for up to 1000 seconds, demonstrating excellent thermal stability. A physical model explains the switching mechanism, involving Au ion migration during "set" and filament disruption during "reset." Current-voltage curves suggest space-charge limited current, emphasizing conductive filament formation. All these results shows good electronic devices and systems towards neuromorphic computing.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.