Evidence map›Paper›PMID 38086833›Full record

ArticleNature communications2023

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering.

Yifei Hao, Xuegang Chen, Le Zhang, Myung-Geun Han, Wei Wang, Yue-Wen Fang, Hanghui Chen, Yimei Zhu, Xia Hong

Open access · goldAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
2.0field-weighted citation impact, top 13% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed, 21 citations in OpenAlex.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors at 4 institutions in 3 countries.

Yifei Hao *Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.ORCID http://orcid.org/0000-0002-8407-0377
Xuegang Chen *Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
Le ZhangDepartment of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
Myung-Geun HanCondensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973-5000, USA.ORCID http://orcid.org/0000-0002-3736-3281
Wei WangCondensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973-5000, USA.ORCID http://orcid.org/0000-0001-9919-1860
Yue-Wen FangFisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018, Donostia/San Sebastián, Spain.ORCID http://orcid.org/0000-0003-3674-7352
Hanghui ChenNYU-ECNU Institute of Physics, NYU Shanghai, 200062, Shanghai, China.ORCID http://orcid.org/0000-0002-4371-931X
Yimei ZhuCondensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973-5000, USA.ORCID http://orcid.org/0000-0002-1638-7217
Xia HongDepartment of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA. xia.hong@unl.edu.ORCID http://orcid.org/0000-0002-7873-5774
University of Nebraska–Lincoln · USBrookhaven National Laboratory · USNew York University Shanghai · CNUniversity of the Basque Country · ES

Funding

DOE | Office of Science (SC) DE-SC0012704Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology) 2021YFE0107900National Science Foundation (NSF) 2044049NSF | Directorate for Mathematical & Physical Sciences | Division of Materials Research (DMR) 1710461NSF | ENG/OAD | Division of Electrical, Communications and Cyber Systems (ECCS) 2025298Science and Technology Commission of Shanghai Municipality (Shanghai Municipal Science and Technology Commission) 23ZR1445400Semiconductor Research Corporation (SRC) 2831.001
6 · The paper itself

Abstract

The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore's Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr

Identifiers

PMID38086833
PMCPMC10716183
OpenAlexW4389612381

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.