Evidence map›Paper›PMID 38068186›Full record

ArticleMaterials (Basel, Switzerland)2023

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.

Yanlian Yang, Yao Liu, Lianshan Wang, Shuping Zhang, Haixia Lu, Yi Peng, Wenwang Wei, Jia Yang, Zhe Chuan Feng, Lingyu Wan and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Yanlian YangResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Yao LiuResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Lianshan WangResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Shuping ZhangResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Haixia LuResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Yi PengResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Wenwang WeiResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.ORCID 0000-0002-1813-9495
Jia YangResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Zhe Chuan FengSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Kennesaw, GA 30144, USA.
Lingyu WanCenter on Nano-Energy Research, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Benjamin KleinSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Kennesaw, GA 30144, USA.
Ian T FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Kennesaw, GA 30144, USA.
Wenhong SunResearch Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.ORCID 0000-0002-2936-767X

Funding

Disinfection Robot Based on High Power AlGaN-based UVLEDs BB31200014Doctoral Research Start-up Foundation of Guangxi University XBZ2201513Guangxi Science and Technology Base and Talent Special Project AD20238093Guangxi Science and Technology Program A3120051010Guangxi Science and Technology Program AD19245132High luminous efficiency and long life DUV LED technology AC22080003National Key R&D Program of China 2022YFB3605100National Key R&D Program of China 2022YFB3605101
6 · The paper itself

Abstract

The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (

Indexed as

aluminum nitridespectroscopic ellipsometrytemperature-dependent SEUrbach’s binding energy

Identifiers

PMID38068186
PMCPMC10707361

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.