Evidence map›Paper›PMID 38064557›Full record

ArticleScience advances2023

Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design.

Mu-Pai Lee, Caifang Gao, Meng-Yu Tsai, Che-Yi Lin, Feng-Shou Yang, Hsin-Ya Sung, Chi Zhang, Wenwu Li, Jun Li, Jianhua Zhang and 10 more

Abstract read
In one paragraph

Article in Science advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.

0numbers the graph read from it
0cells of the map it votes in
7citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

7 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

20 authors.

Mu-Pai LeeDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0009-0005-3109-3953
Caifang GaoShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.ORCID 0009-0005-8904-6404
Meng-Yu TsaiDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.ORCID 0009-0004-2969-3629
Che-Yi LinDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.ORCID 0009-0007-6997-2042
Feng-Shou YangDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
Hsin-Ya SungDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Chi ZhangShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.ORCID 0009-0003-8785-1288
Wenwu LiShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.ORCID 0000-0002-9307-1566
Jun LiSchool of Microelectronics, Shanghai University, Jiading, Shanghai 201800, China.ORCID 0000-0003-0124-1757
Jianhua ZhangSchool of Microelectronics, Shanghai University, Jiading, Shanghai 201800, China.ORCID 0000-0001-8061-1861
Kenji WatanabeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.ORCID 0000-0003-3701-8119
Takashi TaniguchiResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.ORCID 0000-0002-1467-3105
Keiji UenoDepartment of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan.ORCID 0000-0002-5535-9382
Kazuhito TsukagoshiInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan.
Ching-Hwa HoGraduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan.ORCID 0000-0002-7195-208X
Junhao ChuShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.ORCID 0000-0003-1867-9296
Po-Wen ChiuInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.ORCID 0000-0003-4909-0310
Mengjiao LiSchool of Microelectronics, Shanghai University, Jiading, Shanghai 201800, China.ORCID 0000-0003-4801-560X
Wen-Wei WuDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0002-8388-8417
Yen-Fu LinDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.ORCID 0000-0002-1545-9143

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Silicon CMOS-based computing-in-memory encounters design and power challenges, especially in logic-in-memory scenarios requiring nonvolatility and reconfigurability. Here, we report a universal design for nonvolatile reconfigurable devices featuring a 2D/3D heterointegrated configuration. By leveraging the photo-controlled charge trapping/detrapping process and the partially top-gated energy band landscape, the van der Waals heterostacking achieves polarity storage and logic reconfigurable characteristics, respectively. Precise polarity tunability, logic nonvolatility, robustness against high temperature (at 85°C), and near-ideal subthreshold swing (80 mV dec

Identifiers

PMID38064557
PMCPMC10708197

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.