Evidence map›Paper›PMID 38063759›Full record

ArticleNanomaterials (Basel, Switzerland)2023

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf

Anastasia Chouprik, Ekaterina Savelyeva, Evgeny Korostylev, Ekaterina Kondratyuk, Sergey Zarubin, Nikita Sizykh, Maksim Zhuk, Andrei Zenkevich, Andrey M Markeev, Oleg Kondratev and 1 more

Abstract read
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In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Anastasia ChouprikMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Ekaterina SavelyevaMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Evgeny KorostylevMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Ekaterina KondratyukMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Sergey ZarubinMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Nikita SizykhMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Maksim ZhukMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Andrei ZenkevichMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Andrey M MarkeevMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia.
Oleg KondratevNational Research Center "Kurchatov Institute", 123098 Moscow, Russia.
Sergey YakuninNational Research Center "Kurchatov Institute", 123098 Moscow, Russia.

Funding

Russian Science Foundation 20-19-00370The Ministry of Science and Higher Education of Russian Federation 075-15-2023-448The Ministry of Science and Higher Education of Russian Federation FSMG-2022-0031
6 · The paper itself

Abstract

The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick Hf

Indexed as

domain structureferroelectric hafnium oxideferroelectric memoryferroelectric thin filmpolarization switching kinetics

Identifiers

PMID38063759
PMCPMC10708351

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.