High-Performance Biomemristor Embedded with Graphene Quantum Dots.

Lu Wang, Jing Yang, Xiafan Zhang, Dianzhong Wen

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Advances and Perspectives in Graphene-Based Quantum Dots Enabled Neuromorphic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
Review

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Lu WangHeilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Jing YangHeilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Xiafan ZhangHeilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Dianzhong WenHeilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Funding

Basic Research Project funded by the Basic Research Business Funding for Provincial Universities in Heilongjiang Province 2022-KYYWF-1088Heilongjiang Provincial Natural Science Foundation of China LH2021F045National Natural Science Foundation of China 62371183

6 · The paper itself

Abstract

By doping a dielectric layer material and improving the device's structure, the electrical characteristics of a memristor can be effectively adjusted, and its application field can be expanded. In this study, graphene quantum dots are embedded in the dielectric layer to improve the performance of a starch-based memristor, and the PMMA layer is introduced into the upper and lower interfaces of the dielectric layer. The experimental results show that the switching current ratio of the Al/starch: GQDs/ITO device was 10

Indexed as

graphene quantum dotsPMMA layerresistive memorystarch

Identifiers

PMID38063717

DOI10.3390/nano13233021

PMCPMC10708532

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.