Evidence map›Paper›PMID 38055810›Full record

ArticleScience advances2023

Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction.

Shuguang Wang, Lei Han, Ye Zou, Bingyao Liu, Zhi-Hao He, Yinan Huang, Zhongwu Wang, Lei Zheng, Yong-Xu Hu, Qiang Zhao and 7 more

Abstract read
In one paragraph

Article in Science advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Defect-Polarization Coupling in 3D-Graphene/β-GaSmall (Weinheim an der Bergstrasse, Germany) · 2026
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Shuguang WangTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0003-4336-5547
Lei HanSchool of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0002-1636-9852
Ye ZouBeijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.ORCID 0000-0002-7642-0226
Bingyao LiuElectron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.ORCID 0000-0002-7369-7019
Zhi-Hao HeDepartment of Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin University, Tianjin 300350, China.
Yinan HuangTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0002-9579-4119
Zhongwu WangTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0002-1331-9796
Lei ZhengTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.
Yong-Xu HuTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.
Qiang ZhaoCollege of Science, Civil Aviation University of China (CAUC), Tianjin 300300, China.ORCID 0000-0002-2545-2383
Yajing SunTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0003-2807-9382
Zhi-Qing LiDepartment of Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin University, Tianjin 300350, China.ORCID 0000-0003-4233-2006
Peng GaoElectron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.ORCID 0000-0001-9868-2115
Xiaosong ChenTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0002-3055-8852
Xiaojun GuoSchool of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0003-3946-9458
Liqiang LiTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0001-8399-3957
Wenping HuTianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.ORCID 0000-0001-5686-2740

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~10

Identifiers

PMID38055810
PMCPMC10699771

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.