Evidence map›Paper›PMID 38038784›Full record

ReviewNano convergence2023

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.

Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park

Abstract readReview
In one paragraph

Review in Nano convergence, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 29 papers.

0numbers the graph read from it
0cells of the map it votes in
29citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

29 citing papers in PubMed.

  1. Review
  2. Thickness Engineering in HfONanomaterials (Basel, Switzerland) · 2026
    Review
  3. Article
  4. Wake-Up and Fatigue under Electrical Cycling in HfOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  5. Article
  6. Article
  7. TiONano convergence · 2026
    Article
  8. Probabilistic computing utilizing HfONature communications · 2026
    Article
  9. Memristive Baffle Systems: Design, Simulation, and Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  10. Orientation-Confinement-Engineered Stabilization of Ferroelectricity in HfOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  11. Article
  12. Tunable Switching Mechanisms in HfZrOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  13. Article
  14. Article
  15. Advancing the Frontiers of HfOAdvanced materials (Deerfield Beach, Fla.) · 2025
    Review
  16. Article
  17. Article
  18. Environmental Control of Ferroelectricity in Hafnia Films.Advanced materials (Deerfield Beach, Fla.) · 2025
    Article
  19. Article
  20. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Jaewook Lee *Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
Kun Yang *Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
Ju Young Kwon *Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
Ji Eun KimElectronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
Dong In HanDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
Dong Hyun LeeDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
Jung Ho YoonElectronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea. jhyoon@kist.re.kr.
Min Hyuk ParkDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea. minhyuk.park@snu.ac.kr.ORCID http://orcid.org/0000-0001-6333-2668

Funding

Korea Institute of Science and Technology 2E32491Korea Institute of Science and Technology 2V09802national research foundation, Korea 2020M3F3A2A01081593national research foundation, Korea 2020R1C1C1008193national research foundation, Korea 2021M3F3A2A01037738national research foundation, Korea 2021M3F3A2A02037889national research foundation, Korea 2022R1C1C1004176
6 · The paper itself

Abstract

HfO

Indexed as

FerroelectricityHfO2Memory deviceResistive switchingSemiconductor

Identifiers

PMID38038784
PMCPMC10692067

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.