ArticleChemistry of materials : a publication of the American Chemical Society2023
Limits to Hole Mobility and Doping in Copper Iodide.
Article in Chemistry of materials : a publication of the American Chemical Society, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- Screening ASbChemistry of materials : a publication of the American Chemical Society · 2026Article
- Rashba spin splitting and phonon-limited carrier mobility in novel two-dimensional Janus ZCrBSeRSC advances · 2026Article
- Establishing Doping Limits for ZnGaACS applied materials & interfaces · 2025Article
Corrections and comments
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Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Over one hundred years have passed since the discovery of the p-type transparent conducting material copper iodide, predating the concept of the "electron-hole" itself. Supercentenarian status notwithstanding, little is understood about the charge transport mechanisms in CuI. Herein, a variety of modeling techniques are used to investigate the charge transport properties of CuI, and limitations to the hole mobility over experimentally achievable carrier concentrations are discussed. Poor dielectric response is responsible for extensive scattering from ionized impurities at degenerately doped carrier concentrations, while phonon scattering is found to dominate at lower carrier concentrations. A phonon-limited hole mobility of 162 cm
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