ArticleSensors (Basel, Switzerland)2023
A CMOS Image Sensor Dark Current Compensation Using In-Pixel Temperature Sensors.
Article in Sensors (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Reduction in Dark Current in Photodiodes: A Review.Micromachines · 2026Review
- Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel.Sensors (Basel, Switzerland) · 2025Article
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2 authors.
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Abstract
This paper presents a novel technique for dark current compensation of a CMOS image sensor (CIS) by using in-pixel temperature sensors (IPTSs) over a temperature range from -40 °C to 90 °C. The IPTS makes use of the 4T pixel as a temperature sensor. Thus, the 4T pixel has a double functionality, either as a pixel or as a temperature sensor. Therefore, the dark current compensation can be carried out locally by generating an artificial dark reference frame from the temperature measurements of the IPTSs and the temperature behavior of the dark current (previously calibrated). The artificial dark current frame is subtracted from the actual images to reduce/cancel the dark signal level of the pictures. In a temperature range from -40 °C to 90 °C, results show that the temperature sensors have an average temperature coefficient (TC) of 1.15 mV/°C with an inaccuracy of ±0.55 °C. Parameters such as conversion gain, gain of the amplifier, and ADC performance have been analyzed over temperature. The dark signal can be compensated in the order of 80% in its median value, and the nonuniformity is reduced in the order of 55%.
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