ArticleNanomaterials (Basel, Switzerland)2023
Laser Ablation of Silicon Nanoparticles and Their Use in Charge-Coupled Devices for UV Light Sensing via Wavelength-Shifting Properties.
Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
1 citing paper in PubMed.
- Influence of laser beam profile on morphology and optical properties of silicon nanoparticles formed by laser ablation in liquid.Beilstein journal of nanotechnology · 2025Article
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Authors and funding
7 authors.
Funding
Abstract
This study explores the controlled laser ablation and corresponding properties of silicon nanoparticles (Si NP) with potential applications in ultraviolet (UV) light sensing. The size distribution of Si NPs was manipulated by adjusting the laser scanning speed during laser ablation of a silicon target in a styrene solution. Characterization techniques, including transmission electron microscopy, Raman spectroscopy, and photoluminescence analysis, were employed to investigate the Si NP structural and photophysical properties. Si NP produced at a laser scanning speed of 3000 mm/s exhibited an average diameter of ~4 nm, polydispersity index of 0.811, and a hypsochromic shift in the Raman spectrum peak position. Under photoexcitation at 365 nm, these Si NPs emitted apparent white light, demonstrating their potential for optoelectronic applications. Photoluminescence analysis revealed biexponential decay behavior, suggesting multiple radiative recombination pathways within the nanoscale structure. Furthermore, a thin film containing Si NP was utilized as a passive filter for a 2nd generation CCD detector, expanding the functionality of the non-UV-sensitive detectors in optics, spectrometry, and sensor technologies.
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Registered trials
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