Evidence map›Paper›PMID 37969785›Full record

ArticleACS applied nano materials2023

Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation.

Yael Gutiérrez, Stefano Dicorato, Elena Dilonardo, Fabio Palumbo, Maria M Giangregorio, Maria Losurdo

Abstract read
In one paragraph

Article in ACS applied nano materials, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Yael GutiérrezIstituto di Chimica della Materia Condensata e delle Tecnologie per l'Energia, ICMATE, CNR, C.so Stati Uniti 4, 35127 Padova, Italy.ORCID https://orcid.org/0000-0002-1604-7968
Stefano DicoratoInstitute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy.
Elena DilonardoInstitute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy.ORCID https://orcid.org/0000-0001-6968-0153
Fabio PalumboInstitute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy.ORCID https://orcid.org/0000-0002-7972-9819
Maria M GiangregorioInstitute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy.
Maria LosurdoIstituto di Chimica della Materia Condensata e delle Tecnologie per l'Energia, ICMATE, CNR, C.so Stati Uniti 4, 35127 Padova, Italy.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement. Here, we perform a comparative study of the stability of layered GaS, GaSe, and GaTe nanometer-thick films down to a few layers with the goal of identifying the most suitable Ga chalcogenide for future integration in photonic and optoelectronic devices. Our study unveils a trend of decreasing air stability from sulfide to selenide and finally to telluride. Furthermore, we demonstrate a hydrogen passivation process to prevent the oxidation of GaSe with a higher feasibility and durability than other state-of-the-art passivation methods proposed in the literature.

Identifiers

PMID37969785
PMCPMC10644295

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.