ArticleNanomaterials (Basel, Switzerland)2023
Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes.
Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
2 citing papers in PubMed.
- Recent Progress of Photodetectors and Optoelectronic Synapses Based on Metal Oxide Thin-Film Transistors.Materials (Basel, Switzerland) · 2026Review
- Sensor Arrays: A Comprehensive Systematic Review.Sensors (Basel, Switzerland) · 2025Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
A novel approach to fabricating a transparent and flexible one-transistor-one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (<90 °C) deposition process are integrated with a densely packed 14 × 14 pixel array. The low-temperature-processed a-Si:H photodiodes show reasonable performance with responsivity and detectivity for 31.43 mA/W and 3.0 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.