ArticleNature communications2023
Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics.
Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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Who cites it
8 citing papers in PubMed.
- Structural Transition in Few-Layer Group-IV Monochalcogenides Induced by Mechanical Forces.ACS omega · 2026Article
- Strain mapping of three-dimensionally structured two-dimensional materials.Science advances · 2026Article
- Displacive In-Plane Ferroelectricity with Domain-Specific Curie Temperature in Van der Waals Semiconductors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- SnSeSmall (Weinheim an der Bergstrasse, Germany) · 2026Article
- Revealing atomic-scale switching pathways in van der Waals ferroelectrics.Science advances · 2025Article
- In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSeProceedings of the National Academy of Sciences of the United States of America · 2025Article
- Room-temperature multiferroicity in sliding van der Waals semiconductors with sub-0.3 V switching.Nature communications · 2025Article
- Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides.Nature communications · 2025Article
Corrections and comments
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Authors and funding
15 authors.
Funding
Abstract
Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics.
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Registered trials
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