Evidence map›Paper›PMID 37933380›Full record

ArticleExploration (Beijing, China)2023

Ultralow-power in-memory computing based on ferroelectric memcapacitor network.

Bobo Tian, Zhuozhuang Xie, Luqiu Chen, Shenglan Hao, Yifei Liu, Guangdi Feng, Xuefeng Liu, Hongbo Liu, Jing Yang, Yuanyuan Zhang and 14 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Exploration (Beijing, China), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Review
  2. Review
  3. In-memory ferroelectric differentiator.Nature communications · 2025
    Article
  4. Article
  5. GaNanomaterials (Basel, Switzerland) · 2024
    Article
  6. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

24 authors.

Bobo TianKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.ORCID https://orcid.org/0000-0002-4251-2755
Zhuozhuang XieKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Luqiu ChenKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Shenglan HaoKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Yifei LiuKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Guangdi FengKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Xuefeng LiuKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Hongbo LiuSchool of Materials Science and Engineering Shanghai University of Engineering Science Shanghai China.
Jing YangKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Yuanyuan ZhangKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Wei BaiKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Tie LinState Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.
Hong ShenState Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.
Xiangjian MengState Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.
Ni ZhongKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Hui PengKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.ORCID https://orcid.org/0000-0002-9062-2799
Fangyu YueKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Xiaodong TangKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Jianlu WangFrontier Institute of Chip and System Fudan University Shanghai China.
Qiuxiang ZhuKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Yachin IvryDepartment of Materials Science and Engineering Solid-State Institute Technion-Israel Institute of Technology Haifa Israel.
Brahim DkhilCentraleSupélec, CNRS-UMR8580, Laboratoire SPMS Université Paris-Saclay Gif-sur-Yvette France.
Junhao ChuKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Chungang DuanKey Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Analog storage through synaptic weights using conductance in resistive neuromorphic systems and devices inevitably generates harmful heat dissipation. This thermal issue not only limits the energy efficiency but also hampers the very-large-scale and highly complicated hardware integration as in the human brain. Here we demonstrate that the synaptic weights can be simulated by reconfigurable non-volatile capacitances of a ferroelectric-based memcapacitor with ultralow-power consumption. The as-designed metal/ferroelectric/metal/insulator/semiconductor memcapacitor shows distinct 3-bit capacitance states controlled by the ferroelectric domain dynamics. These robust memcapacitive states exhibit uniform maintenance of more than 10

Indexed as

ferroelectricin‐memory computingmemcapacitorP(VDF‐TrFE)ultralow power

Identifiers

PMID37933380
PMCPMC10624373

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.