Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers.

Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of spin-based quantum technologies, nano-mechanical resonators and photonics-on-a-chip. For shaping 3D structures out of SiC wafers, predominantly dry-etching techniques are used. SiC is nearly inert with respect to wet etching, occasionally photoelectrochemical etching strategies have been applied. Here, we propose an electrochemical etching strategy that solely relies on defining etchable volumina by implantation of p-dopants. Together with the inertness of the n-doped regions, very sharp etching contrasts can be achieved. We present devices as different as monolithic cantilevers, disk-shaped optical resonators and membranes etched out of a single crystal wafer. The high quality of the resulting surfaces can even be enhanced by thermal treatment, with shape-stable devices up to and even beyond 1550°C. The versatility of our approach paves the way for new functionalities on SiC as high-performance multi-functional wafer platform.