ArticleNature communications2023
Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In
Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
10 citing papers in PubMed.
- Damage-free van der Waals metal/NbONano convergence · 2026Article
- Reconfigurable ferroelectric transistor array for embodied neuromorphic vision with hardware-native sensing, computing, and activation.Science advances · 2026Article
- Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor.Nature communications · 2026Article
- Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post-Moore Era.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Hybrid functional 3D artificial synapses for convolution and reinforcement learning.Science advances · 2025Article
- 2D ferroelectric narrow-bandgap semiconductor Wurtzite' type α-InNature communications · 2025Article
- Ultralow-pressure mechanical-motion switching of ferroelectric polarization.Science advances · 2025Article
- Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing.Advanced materials (Deerfield Beach, Fla.) · 2025Review
- Free-standing two-dimensional ferro-ionic memristor.Nature communications · 2024Article
- Progress of emerging non-volatile memory technologies in industry.MRS communications · 2024Review
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.