ArticleProceedings of the National Academy of Sciences of the United States of America2023
Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity.
Article in Proceedings of the National Academy of Sciences of the United States of America, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- High efficiency, high color purity red micro-light-emitting diodes.Light, science & applications · 2026Article
- Van der Waals quantum dots on layered hexagonal boron nitride.Proceedings of the National Academy of Sciences of the United States of America · 2025Article
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7 authors.
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Abstract
Interface engineering in heterostructures at the atomic scale has been a central research focus of nanoscale and quantum material science. Despite its paramount importance, the achievement of atomically ordered heterointerfaces has been severely limited by the strong diffusive feature of interfacial atoms in heterostructures. In this work, we first report a strong dependence of interfacial diffusion on the surface polarity. Near-perfect quantum interfaces can be readily synthesized on the semipolar plane instead of the conventional
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