ArticleACS energy letters2023
High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites.
Article in ACS energy letters, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- Genetic Algorithm-Assisted Multilayer SPR Refractive-Index Sensor with FASnISensors (Basel, Switzerland) · 2026Article
- π‑Conjugated Indole-Based 2D Perovskite Microcavities for Self-Powered Ultraviolet Photodetection.Chemistry of materials : a publication of the American Chemical Society · 2026Article
- 940 Nm Near-Infrared Photosynapses Based on Sn─Pb Perovskite for Efficient Face Recognition.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Synergistic Effects of Additive Engineering in Enhancing the Performance of Sn-Pb Perovskite Thin-Film Transistors and Derived Logic Circuits.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Enabling Robust N-Type Perovskite Field-Effect Transistors Through an TiOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Low-dimensional templates and delayed crystallization for high-quality tin-based perovskite films and high-performance transistors.Nature communications · 2025Article
- Optically Determined Hole Effective Mass in Tin-Iodide Perovskite Films.ACS energy letters · 2025Article
- Tailoring tin-based perovskite crystallization via large cations and pseudo-halide anions for high mobility and high stable transistors.Science advances · 2025Article
- Perovskite Thin-Film Transistors for Ultra-Low-Voltage Neuromorphic Visions.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
Corrections and comments
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Electronic devices based on tin halide perovskites often exhibit a poor operational stability. Here, we report an additive engineering strategy to realize high-performance and stable field-effect transistors (FETs) based on 3D formamidinium tin iodide (FASnI
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Registered trials
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