Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems.

Yu-Tang Luo, Zhehan Zhou, Cheng-Yang Wu, Li-Ching Chiu, Jia-Yang Juang

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Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

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1citing papers in PubMed

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1 citing paper in PubMed.

Towards Advanced Materials: Functional Perspectives of Co-Doped ZnO Thin Films.Micromachines · 2025
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5 authors.

Yu-Tang LuoDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan.ORCID 0009-0000-5200-0342

Zhehan ZhouDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan.

Cheng-Yang WuDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan.

Li-Ching ChiuDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan.

Jia-Yang JuangDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan.ORCID 0000-0001-6801-3244

Funding

Ministry of Science and Technology (MOST) of Taiwan 109-2223-E-002-003-MY3National Taiwan University N/A

6 · The paper itself

Abstract

Co-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties and more controllable optical properties, including transmittance and haze; however, most previous studies focused on the electrical properties, with less attention paid to obtaining high haze using co-doping. Here, we prepare high-haze Ga- and Zr-co-doped ZnO (GZO:Zr or ZGZO) using atmospheric pressure plasma jet (APPJ) systems. We conduct a detailed analysis to examine the interplay between Zr concentrations and film properties. UV-Vis spectroscopy shows a remarkable haze factor increase of 7.19% to 34.8% (+384%) for the films prepared with 2 at% Zr and 8 at% Ga precursor concentrations. EDS analysis reveals Zr accumulation on larger and smaller particles, while SIMS links particle abundance to impurity uptake and altered electrical properties. XPS identifies Zr mainly as ZrO

Indexed as

atmospheric pressure plasma jet (APPJ)co-dopinghazetransparent conductive oxide (TCO)

Identifiers

PMID37836332

DOI10.3390/nano13192691

PMCPMC10574760

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