ArticleMaterials (Basel, Switzerland)2023
Effects of Post-Annealing on the Properties of ZnO:Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square).
Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- The Effect of Substrate Type on the Optical and Structural Properties of Sol-Gel ZnO and ZnO:Ga Films.Molecules (Basel, Switzerland) · 2025Article
- Peculiarities of Electric and Dielectric Behavior of Ni- or Fe-Doped ZnO Thin Films Deposited by Atomic Layer Deposition.Materials (Basel, Switzerland) · 2024Article
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Abstract
This study presents gallium-doped zinc oxide (ZnO:Ga, GZO) thin films. GZO thin films with both high transparency and low sheet resistance were prepared by RF sputtering and then post-annealed under nitrogen and hydrogen forming gas. With post-annealing at 450 °C, the proposed films with a film thickness of 100 nm showed high transparency (94%), while the sheet resistance of the films was reduced to 29 Ω/square, which was comparable with the performances of commercial indium tin oxide (ITO) samples. Post-annealing under nitrogen and hydrogen forming gas enhanced the films' conductivity while altering the thin-film composition and crystallinity. Nitrogen gas played a role in improving the crystallinity while maintaining the oxygen vacancy of the proposed films, whereas hydrogen did not dope into the thin film, thus maintaining its transparency. Furthermore, hydrogen lowered the resistance of GZO thin films during the annealing process. Then, the detailed mechanisms were discussed. Hydrogen post-annealing helped in the removal of oxygen, therefore increasing the Ga
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