Evidence map›Paper›PMID 37773231›Full record

ArticleNature communications2023

The role of arsenic in the operation of sulfur-based electrical threshold switches.

Renjie Wu, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun, Shujing Jia, Xiangshui Miao, Stephen R Elliott, Min Zhu, Ming Xu and 1 more

Open access · goldAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.

0numbers the graph read from it
0cells of the map it votes in
9citing papers in PubMed
3.9field-weighted citation impact, top 5% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

9 citing papers in PubMed, 41 citations in OpenAlex.

  1. Article
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  6. Microscopic Origin of Polarity-Dependent VAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
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  9. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors at 5 institutions in 3 countries.

Renjie Wu *National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Rongchuan Gu *Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.
Tamihiro Gotoh *Department of Physics, Graduate School of Science and Technology, Gunma University, Maebashi, 3718510, Japan.ORCID http://orcid.org/0000-0001-5659-3624
Zihao ZhaoNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Yuting SunNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Shujing JiaFrontier Institute of Chip and System, Fudan University, Shanghai, 200050, China.
Xiangshui MiaoWuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.ORCID http://orcid.org/0000-0002-3999-7421
Stephen R ElliottTrinity College, University of Cambridge, Cambridge, CB2 1TQ, UK.
Min ZhuNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. minzhu@mail.sim.ac.cn.ORCID http://orcid.org/0000-0001-8057-9742
Ming XuWuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China. mxu@hust.edu.cn.ORCID http://orcid.org/0000-0002-2730-283X
Zhitang SongNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. ztsong@mail.sim.ac.cn.ORCID http://orcid.org/0000-0001-7859-9429
Chinese Academy of Sciences · CNWuhan National Laboratory for Optoelectronics · CNFudan University · CNGunma University · JPUniversity of Cambridge · GB

Funding

National Outstanding Youth Foundation of China 62322411
6 · The paper itself

Abstract

Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the latter. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are key units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of As into GeS brings >100 °C increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, which reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a back-end-of-line-compatible OTS selector with >12 MA/cm

Identifiers

PMID37773231
PMCPMC10542328
OpenAlexW4387187768

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.