Evidence map›Paper›PMID 37770482›Full record

ArticleNature communications2023

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor.

Wenhui Wang, Ke Li, Jun Lan, Mei Shen, Zhongrui Wang, Xuewei Feng, Hongyu Yu, Kai Chen, Jiamin Li, Feichi Zhou and 3 more

Open access · goldAbstract read
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 14 papers.

0numbers the graph read from it
0cells of the map it votes in
14citing papers in PubMed
8.6field-weighted citation impact, top 2% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

14 citing papers in PubMed, 66 citations in OpenAlex.

  1. Article
  2. Article
  3. Review
  4. Review
  5. Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  6. Article
  7. Article
  8. Remarkably High Effective Mobility of 301 cmNanomaterials (Basel, Switzerland) · 2026
    Article
  9. Review
  10. Article
  11. Article
  12. Article
  13. Article
  14. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors at 4 institutions in 2 countries.

Wenhui Wang *School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
Ke Li *School of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
Jun LanSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.ORCID http://orcid.org/0000-0003-4824-8243
Mei ShenSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
Zhongrui WangDepartment of Electrical and Electronic Engineering, The University of Hong Kong, 999077, Hong Kong SAR, China.ORCID http://orcid.org/0000-0003-2264-0677
Xuewei FengShanghai Jiao Tong University, 200240, Shanghai, China.
Hongyu YuSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
Kai ChenSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
Jiamin LiSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.
Feichi ZhouSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China.ORCID http://orcid.org/0000-0001-7756-1082
Longyang LinSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China. linly@sustech.edu.cn.ORCID http://orcid.org/0000-0002-4702-737X
Panpan ZhangState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, 100876, Beijing, China. tanji_ic@bupt.edu.cn.ORCID http://orcid.org/0009-0000-5449-2176
Yida LiSchool of Microelectronics, Southern University of Science and Technology, 518055, Shenzhen, China. liyd3@sustech.edu.cn.ORCID http://orcid.org/0000-0002-5675-582X
Southern University of Science and Technology · CNBeijing University of Posts and Telecommunications · CNShanghai Jiao Tong University · CNUniversity of Hong Kong · HK

Funding

National Natural Science Foundation of China (National Science Foundation of China) 52273246National Natural Science Foundation of China (National Science Foundation of China) 62174074National Natural Science Foundation of China (National Science Foundation of China) 62274081
6 · The paper itself

Abstract

The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall deposition for novel 3D architecture. An optimized ALD deposited ZnO thin-film transistor achieving a record field-effect and intrinsic mobility (µ

Identifiers

PMID37770482
PMCPMC10539278
OpenAlexW4387129936

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.