Evidence map›Paper›PMID 37764541›Full record

ArticleNanomaterials (Basel, Switzerland)2023

Shortwave Infrared InGaAs Detectors On-Chip Integrated with Subwavelength Polarization Gratings.

Huijuan Huang, Yizhen Yu, Xue Li, Duo Sun, Guixue Zhang, Tao Li, Xiumei Shao, Bo Yang

Open access · goldAbstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
0.7field-weighted citation impact, top 35% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed, 6 citations in OpenAlex.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors at 1 institution in 1 country.

Huijuan HuangState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Yizhen YuState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Xue LiState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Duo SunState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Guixue ZhangState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Tao LiState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Xiumei ShaoState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Bo YangState Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.ORCID 0009-0009-3282-215X
Chinese Academy of Sciences · CN

Funding

National Natural Science Foundation of China (NNSFC) 62104238National Natural Science Foundation of China (NNSFC) 62175250Program of Shanghai Academic/Technology Research Leader 21XD1404200
6 · The paper itself

Abstract

Shortwave infrared polarization imaging can increase the contrast of the target to the background to improve the detection system's recognition ability. The division of focal plane polarization indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice due to the advantages of compact structure, real-time imaging, and high stability. However, because of the mismatch between nanostructures and photosensitive pixels as well as the crosstalk among the different polarization directions, the currently reported extinction ratio (ER) of superpixel-polarization-integrated detectors cannot meet the needs of high-quality imaging. In this paper, a 1024 × 4 InGaAs FPA detector on-chip integrated with a linear polarization grating (LPG) was realized and tested. The detector displayed good performance throughout the 0.9-1.7 um band, and the ERs at 1064 nm, 1310 nm and 1550 nm reached up to 22:1, 29:1 and 46:1, respectively. For the crosstalk investigation, the optical simulation of the grating-integrated InGaAs pixel was carried out, and the limitation of the ER was calculated. The result showed that the scattering of incident light in the InP substrate led to the crosstalk. Moreover, the deviation of the actual grating morphology from the designed structure caused a further reduction in the ER.

Indexed as

InGaAspolarization detectionshortwave infraredsubwavelength metal grating

Identifiers

PMID37764541
PMCPMC10535305
OpenAlexW4386496242

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.