Evidence map›Paper›PMID 37763413›Full record

ArticleMaterials (Basel, Switzerland)2023

Improved Uniformity of TaO

Dongyeol Ju, Sunghun Kim, Junwon Jang, Sungjun Kim

Abstract read
In one paragraph

Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. PdNeuRAM: forming-free, multi-bit Pd/HfOCommunications engineering · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Dongyeol JuDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Sunghun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Junwon JangDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Funding

National Research Foundation of Korea 2021R1C1C1004422
6 · The paper itself

Abstract

RRAM devices operating based on the creation of conductive filaments via the migration of oxygen vacancies are widely studied as promising candidates for next-generation memory devices due to their superior memory characteristics. However, the issues of variation in the resistance state and operating voltage remain key issues that must be addressed. In this study, we propose a TaO

Indexed as

bilayerneuromorphic systemRRAMspike-timing-dependent plasticitysynaptic plasticity

Identifiers

PMID37763413
PMCPMC10532643

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.