ReviewNano convergence2023
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing.
Review in Nano convergence, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
9 citing papers in PubMed.
- Research on Memristors in Hardware Security.Micromachines · 2026Review
- Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBaACS applied materials & interfaces · 2026Article
- Printed Organic Memristive Device on Rigid and Flexible Supports for Neuromorphic Applications.Biomimetics (Basel, Switzerland) · 2026Article
- TiONano convergence · 2026Article
- Review
- Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications.Chemistry of materials : a publication of the American Chemical Society · 2024Article
- An elementary review on basic principles and developments of qubits for quantum computing.Nano convergence · 2024Review
- Interfacial Resistive Switching of Niobium-Titanium Anodic Memristors with Self-Rectifying Capabilities.Nanomaterials (Basel, Switzerland) · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
2 authors.
Funding
Abstract
In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas. Here, we address the specific area of multi-level resistive switching in hafnium-oxide-based devices for neuromorphic applications and summarize the progress of the most recent years. While the general approach of resistive switching based on hafnium oxide thin films has been very busy over the last decade or so, the development of hafnium oxide with a continuous range of programmable states per device is still at a very early stage and demonstrations are mostly at the level of individual devices with limited data provided. On the other hand, it is positive that there are a few demonstrations of full network implementations. We summarize the general status of the field, point out open questions, and provide recommendations for future work.
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.