Evidence map›Paper›PMID 37689758›Full record

ArticleNature communications2023

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces.

Zeya Li, Junwei Huang, Ling Zhou, Zian Xu, Feng Qin, Peng Chen, Xiaojun Sun, Gan Liu, Chengqi Sui, Caiyu Qiu and 7 more

Abstract read
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 13 papers.

0numbers the graph read from it
0cells of the map it votes in
13citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

13 citing papers in PubMed.

  1. Article
  2. Artificial Neuron Based on Electrical Anisotropy from WSeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Zeya Li *National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0003-1091-7798
Junwei Huang *National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0003-1776-9863
Ling Zhou *National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0003-0688-5252
Zian Xu *School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.ORCID http://orcid.org/0000-0002-5214-1580
Feng QinNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0003-0575-5691
Peng ChenNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Xiaojun SunNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Gan LiuNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Chengqi SuiNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Caiyu QiuNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Yangfan LuCollege of Materials Sciences and Engineering, National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing, 400030, China.ORCID http://orcid.org/0000-0003-2084-9549
Huiyang GouCenter for High Pressure Science and Technology Advanced Research, Beijing, 100094, China.ORCID http://orcid.org/0000-0002-2612-4314
Xiaoxiang XiNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0002-8685-9267
Toshiya IdeueQuantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan. ideue@issp.u-tokyo.ac.jp.ORCID http://orcid.org/0000-0002-5798-2522
Peizhe TangSchool of Materials Science and Engineering, Beihang University, Beijing, 100191, China. peizhet@buaa.edu.cn.ORCID http://orcid.org/0000-0002-6345-5809
Yoshihiro IwasaQuantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan.ORCID http://orcid.org/0000-0002-8066-8451
Hongtao YuanNational Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. htyuan@nju.edu.cn.ORCID http://orcid.org/0000-0001-5331-9910

Funding

MEXT | Japan Society for the Promotion of Science (JSPS) JP19H05602MEXT | Japan Society for the Promotion of Science (JSPS) JP23H00088National Natural Science Foundation of China (National Science Foundation of China) 12204232National Natural Science Foundation of China (National Science Foundation of China) 12234011National Natural Science Foundation of China (National Science Foundation of China) 21733001National Natural Science Foundation of China (National Science Foundation of China) 51861145201National Natural Science Foundation of China (National Science Foundation of China) 52072168Natural Science Foundation of Jiangsu Province (Jiangsu Provincial Natural Science Foundation) BK20220758
6 · The paper itself

Abstract

Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP

Identifiers

PMID37689758
PMCPMC10492835

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.