Evidence map›Paper›PMID 37687985›Full record

ArticleSensors (Basel, Switzerland)2023

Dark Current Analysis on GeSn

Soumava Ghosh, Greg Sun, Timothy A Morgan, Gregory T Forcherio, Hung-Hsiang Cheng, Guo-En Chang

Abstract read
In one paragraph

Article in Sensors (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Soumava GhoshDepartment of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi 621301, Taiwan.ORCID 0000-0003-3233-004X
Greg SunDepartment of Engineering, University of Massachusetts-Boston, Boston, MA 02125, USA.
Timothy A MorganElectro-Optic Technology Division, Naval Surface Warfare Center, Crane, IN 47522, USA.
Gregory T ForcherioElectro-Optic Technology Division, Naval Surface Warfare Center, Crane, IN 47522, USA.ORCID 0000-0001-7668-0215
Hung-Hsiang ChengCenter for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan.
Guo-En ChangDepartment of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi 621301, Taiwan.ORCID 0000-0002-3739-5451

Funding

Air Force Office of Scientific Research FA9550-19-1-0341National Science and Technology Council of Taiwan MOST 111-2636-E-194-002, NSTC112-2636-E-194-001 and NSTC 112-2923-M-002-004
6 · The paper itself

Abstract

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze the impact of defects on the performance of GeSn

Indexed as

dark currentdefectsdetectivityGeSn alloyssustainability

Identifiers

PMID37687985
PMCPMC10490798

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.