Evidence map›Paper›PMID 37687800›Full record

ArticleSensors (Basel, Switzerland)2023

Modeling Signal-to-Noise Ratio of CMOS Image Sensors with a Stochastic Approach under Non-Stationary Conditions.

Gil Cherniak, Jonathan Nemirovsky, Amikam Nemirovsky, Yael Nemirovsky

Abstract read
In one paragraph

Article in Sensors (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Gil CherniakElectrical Engineering Department, Technion-Israel Institute of Technology, Haifa 3200003, Israel.ORCID 0000-0002-1820-762X
Jonathan NemirovskyElectrical Engineering Department, Technion-Israel Institute of Technology, Haifa 3200003, Israel.
Amikam NemirovskyDepartment of Electrical Engineering, Kinneret College on the Sea of Galilee, Tzemah 1513200, Israel.
Yael NemirovskyElectrical Engineering Department, Technion-Israel Institute of Technology, Haifa 3200003, Israel.

Funding

Smart Imaging Consortium Israel Innovation Authority 74391
6 · The paper itself

Abstract

A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal-oxide-semiconductor (CMOS) image sensors (APS), assuming stationary conditions was recently presented in this journal. In this study, we extend the stochastic approach to non-stationary conditions. Non-stationary conditions occur in gated imaging applications. This new stochastic model, which is based on fundamental physical considerations, enlightens us with new insights into gated CMOS imaging, regardless of the sensor. The Signal-to-Noise Ratio (SNR) is simulated, allowing optimized performance. The conversion gain should be determined under stationary conditions.

Indexed as

CMOS image sensorgated imagingsignal-to-noise ratio (SNR)

Identifiers

PMID37687800
PMCPMC10490096

What OpenQuestion holds

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LicenceCC BY
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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.