Evidence map›Paper›PMID 37686985›Full record

ArticleNanomaterials (Basel, Switzerland)2023

Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System.

Dongyeol Ju, Sunghun Kim, Sungjun Kim

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Dongyeol JuDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Sunghun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Funding

National Research Foundation of Korea 2021R1C1C1004422
6 · The paper itself

Abstract

In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications.

Indexed as

Hebbian learning rulesneuromorphic systemresistive switchingshort-term memorysynaptic plasticity

Identifiers

PMID37686985
PMCPMC10490079

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.