ReviewNanomaterials (Basel, Switzerland)2023
Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO
Review in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- Electrically Active Defects and Traps and Their Relation to Stoichiometry and Chemical Environment in HfOMaterials (Basel, Switzerland) · 2025Article
- Heterogeneous III-V/Si micro-ring laser array with multi-state non-volatile memory for ternary content-addressable memories.Nature communications · 2025Article
- Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition.Nanomaterials (Basel, Switzerland) · 2024Article
Corrections and comments
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Authors and funding
2 authors.
Funding
Abstract
The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, there are still innovations within the current CMOS technology, which could be implemented to improve the data storage ability of memory cells-e.g., replacement of the current dominant floating gate non-volatile memory (NVM) by a charge trapping memory. The latter offers better operation characteristics, e.g., improved retention and endurance, lower power consumption, higher program/erase (P/E) speed and allows vertical stacking. This work provides an overview of our systematic studies of charge-trapping memory cells with a HfO
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Registered trials
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