ArticleScientific reports2023
Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique.
Article in Scientific reports, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- High-performance broadband SiC nanoparticles/porous silicon photodetector prepared by laser ablation in liquid.RSC advances · 2026Article
- Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application.Scientific reports · 2024Article
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Authors and funding
7 authors.
Funding
Abstract
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 °C. The structural and optical properties of GaN films as a function of substrate temperature are investigate. XRD studies reveal that the GaN films deposited on porous silicon are nanocrystalline with a hexagonal wurtzite structure along (002) plane. The photoluminescence emission peaks of the GaN/PSi prepared at 300 °C substrate temperature are located at 368 nm and 728 nm corresponding to energy gap of 3.36 eV and 1.7 eV, respectively. The GaN/PSi heterojunction photodetector prepared at 300 °C exhibits the maximum performance, with a responsivity of 29.03 AW
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Registered trials
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