ArticleNano letters2023
Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes.
Article in Nano letters, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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5 citing papers in PubMed.
- Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure.Scientific reports · 2026Article
- Toward high-current-density and high-frequency graphene resonant tunneling transistors.Nature communications · 2025Article
- Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy.Nanomaterials (Basel, Switzerland) · 2024Article
- Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality.Nanomaterials (Basel, Switzerland) · 2024Article
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8 authors.
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Abstract
The resonant tunneling diode (RTD) is one of the very few room-temperature-operating quantum devices to date that is able to exhibit negative differential resistance. However, the reported key figure of merit, the current peak-to-valley ratio (PVR), of graphene RTDs has been up to only 3.9 at room temperature thus far. This remains very puzzling, given the atomically flat interfaces of the 2D materials. By varying the active area and perimeter of RTDs based on a graphene/hexagonal boron nitride/graphene heterostructure, we discovered that the edge doping can play a dominant role in determining the resonant tunneling, and a large area-to-perimeter ratio is necessary to obtain a high PVR. The understanding enables establishing a novel design rule and results in a PVR of 14.9, which is at least a factor of 3.8 higher than previously reported graphene RTDs. Furthermore, a theory is developed allowing extraction of the edge doping depth for the first time.
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