Evidence map›Paper›PMID 37660183›Full record

ArticleScientific reports2023

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser.

Y H Wang, J H Su, T W Wang, Z Y Lei, Z J Chen, S P Shangguan, J W Han, Y Q Ma

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Y H WangNational Space Science Center, CAS, Beijing, China.
J H SuBeijing University of Posts and Telecommunications, Beijing, China.
T W WangNational Space Science Center, CAS, Beijing, China.
Z Y LeiCollege of Physics and Electronic Science, Hunan University, Changsha, China.
Z J ChenCollege of Physics and Electronic Science, Hunan University, Changsha, China.
S P ShangguanNational Space Science Center, CAS, Beijing, China.
J W HanNational Space Science Center, CAS, Beijing, China.
Y Q MaNational Space Science Center, CAS, Beijing, China. ph_fantasy@163.com.

Funding

National Natural Science Foundation of China U2241280
6 · The paper itself

Abstract

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 [Formula: see text] 10

Identifiers

PMID37660183
PMCPMC10475039

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.