Evidence map›Paper›PMID 37550303›Full record

ArticleNature communications2023

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes.

Seunguk Song, Aram Yoon, Sora Jang, Jason Lynch, Jihoon Yang, Juwon Han, Myeonggi Choe, Young Ho Jin, Cindy Yueli Chen, Yeryun Cheon and 6 more

Abstract read
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 13 papers.

0numbers the graph read from it
0cells of the map it votes in
13citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

13 citing papers in PubMed.

  1. CHSensors (Basel, Switzerland) · 2026
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  12. Review
  13. Toward Ideal Low-Frequency Noise in Monolayer CVD MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Seunguk Song *Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.ORCID http://orcid.org/0000-0002-7075-9704
Aram Yoon *Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Sora Jang *Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Jason LynchDepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, US.
Jihoon YangDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Juwon HanDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Myeonggi ChoeDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Young Ho JinDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Cindy Yueli ChenDepartment of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104, US.
Yeryun CheonDepartment of Physics, Sogang University, Seoul, 04107, Republic of Korea.ORCID http://orcid.org/0000-0001-7094-7150
Jinsung KwakDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Changwook JeongDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Hyeonsik CheongDepartment of Physics, Sogang University, Seoul, 04107, Republic of Korea.ORCID http://orcid.org/0000-0002-2347-4044
Deep JariwalaDepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, US.ORCID http://orcid.org/0000-0002-3570-8768
Zonghoon LeeDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea. zhlee@unist.ac.kr.ORCID http://orcid.org/0000-0003-3246-4072
Soon-Yong KwonDepartment of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea. sykwon@unist.ac.kr.ORCID http://orcid.org/0000-0002-2432-0418

Funding

Ulsan National Institute of Science and Technology (UNIST) 1.200041.01, 1.200095.01
6 · The paper itself

Abstract

High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe

Identifiers

PMID37550303
PMCPMC10406929

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.