Evidence map›Paper›PMID 37546582›Full record

ArticleACS omega2023

Chemically Amplified Molecular Glass Photoresist Regulated by 2-Aminoanthracene Additive for Electron Beam Lithography and Extreme Ultraviolet Lithography.

Siliang Zhang, Long Chen, Jiaxing Gao, Xuewen Cui, Xue Cong, Xudong Guo, Rui Hu, Shuangqing Wang, Jinping Chen, Yi Li and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS omega, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Siliang ZhangBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Long ChenBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Jiaxing GaoBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Xuewen CuiBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Xue CongBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Xudong GuoBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.ORCID https://orcid.org/0000-0002-2012-4399
Rui HuBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.ORCID https://orcid.org/0000-0003-4949-6214
Shuangqing WangBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.ORCID https://orcid.org/0000-0002-8281-9399
Jinping ChenKey Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.ORCID https://orcid.org/0000-0002-5632-2290
Yi LiKey Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.ORCID https://orcid.org/0000-0002-7018-180X
Guoqiang YangBeijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.ORCID https://orcid.org/0000-0003-0726-2217

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

2-Aminoanthracene was used as a nucleophilic additive in a molecular glass photoresist, bisphenol A derivative (BPA-6-epoxy), to improve advanced lithography performance. The effect of 2-aminoanthracene on BPA-6-epoxy was studied by electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL). The result indicates that the additive can optimize the pattern outline by regulating epoxy cross-linking reaction, avoiding photoresist footing effectively in EBL. The EUVL result demonstrates that 2-aminoanthracene can significantly reduce line width roughness (LWR) for HP (Half-Pitch) 25 nm (from 4.9 to 3.8 nm) and HP 22 nm (from 6.9 to 3.0 nm). The power spectrum density (PSD) curve further confirms the reduction of roughness at medium and high frequency for HP 25 nm and the whole range of frequency for HP 22 nm, respectively. The study offers useful guidelines to improve the roughness of a chemically amplified molecular glass photoresist with epoxy groups for electron beam lithography and extreme ultraviolet lithography.

Identifiers

PMID37546582
PMCPMC10398843

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.