Evidence map›Paper›PMID 37513193›Full record

ArticleMolecules (Basel, Switzerland)2023

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell.

Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Molecules (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Zhiqiang YuFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.ORCID 0000-0003-1266-8609
Jinhao JiaFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Xinru QuFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Qingcheng WangFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Wenbo KangFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Baosheng LiuFaculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Qingquan XiaoInstitute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.
Tinghong GaoInstitute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.
Quan XieInstitute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.

Funding

Guangxi Science and Technology Project AD19110038, AD21238033Innovation Project of Guangxi Graduate Education YCSW2021135National Natural Science Foundation of China 62262021, 61805053, 22269002Scientific Research Foundation of Guangxi University of Science and Technology 19Z07
6 · The paper itself

Abstract

A facile sol-gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 10

Indexed as

multilevelnonvolatileoxygen vacanciessol–gelZnO nanofilms

Identifiers

PMID37513193
PMCPMC10385145

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.