Evidence map›Paper›PMID 37513147›Full record

ArticleNanomaterials (Basel, Switzerland)2023

Effect of

Timur S Shamirzaev, Victor V Atuchin

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Timur S ShamirzaevLaboratory of Physics and Technology of Heterostructures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.
Victor V AtuchinLaboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.ORCID 0000-0002-7424-5604

Funding

Russian Science Foundation 22-12-00022
6 · The paper itself

Abstract

The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.

Indexed as

diffusionrecombinationsemiconductor heterostructurevacancy generation

Identifiers

PMID37513147
PMCPMC10383981

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.