Evidence map›Paper›PMID 37513058›Full record

ArticleNanomaterials (Basel, Switzerland)2023

Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs.

F Elmourabit, S Dlimi, A El Moutaouakil, F Id Ouissaaden, A Khoukh, L Limouny, H Elkhatat, A El Kaaouachi

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Contacts at the Nanoscale and for Nanomaterials.Nanomaterials (Basel, Switzerland) · 2024
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

F ElmourabitLaboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco.
S DlimiLaboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco.ORCID 0000-0002-3086-5430
A El MoutaouakilDepartment of Electrical and Communication Engineering, United Arab Emirates University, Al Ain P.O. Box 15551, United Arab Emirates.ORCID 0000-0002-7407-020X
F Id OuissaadenLaboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco.
A KhoukhLaboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco.
L LimounyEquipe des Energies Nouvelles et Ingénierie des Matériaux (ENIM), Laboratoire de Sciences et Techniques de L'ingénieur (LSTI), Physics Department, Faculty of Sciences and Technics Errachidia, Moulay Ismail University, Meknes 50050, Morocco.
H ElkhatatElectrical Engineering Department, National School of Applied Sciences of Tangier (ENSAT), University of Abdelmalek Essaadi, B.P. 416, Tangier 93000, Morocco.
A El KaaouachiDepartment of Physics, Faculty of Sciences, Ibn Zohr University, B.P. 1136, Agadir 80000, Morocco.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, nsc (approximately 0.72×1011 cm-2), which marks the metal insulator transition (MIT). In close proximity to the nsc, the conductivity exhibits a linear dependence on the temperature (

Indexed as

2D Si-MOSFETscarrier densityelectrical conductivitypercolation-type MIT

Identifiers

PMID37513058
PMCPMC10384344

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.