Evidence map›Paper›PMID 37512758›Full record

ArticleMicromachines2023

Silicon Micromachined TSVs for Backside Interconnection of Ultra-Small Pressure Sensors.

Weiwen Feng, Peng Li, Haozhi Zhang, Ke Sun, Wei Li, Jiachou Wang, Heng Yang, Xinxin Li

Abstract read
In one paragraph

Article in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Weiwen FengState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.ORCID 0000-0003-2149-7303
Peng LiState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.ORCID 0009-0000-3453-5204
Haozhi ZhangState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.ORCID 0000-0003-4946-4589
Ke SunState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Wei LiState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Jiachou WangState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.ORCID 0000-0002-3884-620X
Heng YangState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.ORCID 0000-0002-8873-9576
Xinxin LiState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Funding

Guangdong Provincial Key Field R&D Plan Project 2020B1111120004Innovation Team and Talents Cultivation Program of National Administration of Traditional Chinese Medicine ZYYCXTD-D-202002Innovation Team and Talents Cultivation Program of National Administration of Traditional Chinese Medicine ZYYCXTD-D-202003National Key R&D Program of China 2021YFB3200800National Key R&D Program of China 2021YFB3201302National Natural Science Foundation of China 61834007National Natural Science Foundation of China 62074151National Natural Science Foundation of China 62227815
6 · The paper itself

Abstract

This paper presents an ultra-small absolute pressure sensor with a silicon-micromachined TSV backside interconnection for high-performance, high spatial resolution contact pressure sensing, including flexible-substrate applications. By exploiting silicon-micromachined TSVs that are compatibly fabricated with the pressure sensor, the sensing signals are emitted from the chip backside, thereby eliminating the fragile leads on the front-side. Such a design achieves a flat and fully passivated top surface to protect the sensor from mechanical damage, for reliable direct-contact pressure sensing. A single-crystal silicon beam-island structure is designed to reduce the deflection of the pressure-sensing diaphragm and improve output linearity. Using our group-developed microholes interetch and sealing (MIS) micromachining technique, we fabricated ultra-small piezoresistive pressure sensors with the chip size as small as 0.4 mm × 0.6 mm, in which the polysilicon-micromachined TSVs transfer the signal interconnection from the front-side to the backside of the wafer, and the sensor chips can be densely packaged on the flexible substrate via the TSVs. The ultra-small pressure sensor has high sensitivity of 0.84 mV/kPa under 3.3 V of supply voltage and low nonlinearity of ±0.09% full scale (FS) in the measurement range of 120 kPa. The proposed pressure sensors with backside-interconnection TSVs hold promise for tactile sensing applications, including flexible sensing of wearable wristwatches.

Indexed as

backside interconnectionMIS processpressure sensorsilicon micromachined TSV

Identifiers

PMID37512758
PMCPMC10384946

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.