ArticleMicromachines2023
Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
Article in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The trial behind it
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Who cites it
4 citing papers in PubMed.
- High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium-Tin-Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure.ACS omega · 2025Article
- Strengthening Multi-Factor Authentication Through Physically Unclonable Functions in PVDF-HFP-Phase-Dependent a-IGZO Thin-Film Transistors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics.Micromachines · 2024Review
- Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device.Materials (Basel, Switzerland) · 2024Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types of a-IGZO TFTs with different oxygen flow rates and then investigated changes in electrical characteristics. Atomic force microscopy (AFM) was performed to analyze the surface morphology of the a-IGZO films according to the oxygen gas rate. Furthermore, X-ray photoelectron spectroscopy (XPS) analysis was performed to confirm changes in oxygen vacancies of a-IGZO films. The optimized a-IGZO TFT has enhanced electrical characteristics such as carrier mobility (μ) of 12.3 cm
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Registered trials
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