Evidence map›Paper›PMID 37498403›Full record

ArticleDiscover nano2023

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

Fu-He Hsiao, Tzu-Yi Lee, Wen-Chien Miao, Yi-Hua Pai, Daisuke Iida, Chun-Liang Lin, Fang-Chung Chen, Chi-Wai Chow, Chien-Chung Lin, Ray-Hua Horng and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Discover nano, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Fu-He Hsiao *Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
Tzu-Yi Lee *Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Wen-Chien MiaoSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
Yi-Hua PaiDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Daisuke IidaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955 6900, Saudi Arabia.
Chun-Liang LinDepartment of Electrophysics, College of Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Fang-Chung ChenDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Chi-Wai ChowDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Chien-Chung LinDepartment of Electrical Engineering, National Taiwan University, Taipei, 10639, Taiwan.
Ray-Hua HorngInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Jr-Hau HeDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong Special Administrative Region, China.
Kazuhiro OhkawaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955 6900, Saudi Arabia.
Yu-Heng HongSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. enoch.yh.hong@foxconn.com.
Chiao-Yun ChangDepartment of Electrical Engineering, National Taiwan Ocean University, Keelung, 202301, Taiwan. cy_chang@mail.ntou.edu.tw.
Hao-Chung KuoSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. hckuo0206@nycu.edu.tw.

Funding

Ministry of Science and Technology in Taiwan MOST 111-2124-M-A49-004
6 · The paper itself

Abstract

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm

Indexed as

Micro-LEDRed InGaN-based LEDVisible light communication

Identifiers

PMID37498403
PMCPMC10374497

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.